In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone-Reference-Cited by-同舟云学术

In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone

Published:2013-08 Issue: Volume:108 Page:66-70
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Qu Zilian,Zhao Qian,Meng Yonggang,Wang Tongqing,Zhao Dewen,Men Yanwu,Lu Xinchun

Funder

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

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2. Application of soft landing to the process control of chemical mechanical polishing

3. Ron allen, charles chen, tom trikas kurt lehman, Robert Shinagawa, Vijay Bhaskaran, Seminconductor Manufacturing Symposium, (2001) IEEE International, pp. 391–394.

4. Li et al., United States Patent, No. US6072313.

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