Monitoring wafer cleanliness and metal contamination via VPD ICP-MS: Case studies for next generation requirements-Reference-Cited by-同舟云学术

Monitoring wafer cleanliness and metal contamination via VPD ICP-MS: Case studies for next generation requirements

Published:2010-11 Issue:9 Volume:87 Page:1701-1705
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Beebe Meredith,Anderson Scott

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Collection Efficiency of Metallic Contaminants on Si Wafer by Vapor-Phase Decomposition-Droplet Collection.

2. International Technology Roadmap for Semiconductors, .

3. M. Beebe, C. Sparks, A. Rudack, Detection of Copper in the Edge Exclusion Area of Wafers Transported in 300mm FOUPs, Materials Integrity Management Symposium, Santa Clara, California, 2003.

4. A. Maeda, M. Kageyama, S. Yoshii, M. Ogino, United States Patent 4,990,459, 1991.

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