Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD-Reference-Cited by-同舟云学术

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Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD

Published:2022-10-13 Issue:9 Volume:81 Page:903-909
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Kwon Hyo-Jun,Park Jea-Gun

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.1007/s40042-022-00625-5.pdf

Reference36 articles.

1. W.C. Jeong et al., 2018 IEEE Symp. on VLSI Tech. 59–60 (2018)

2. D. Ha et al., 2017 Symp. on VLSI Tech. T68–T69 (2017)

3. G. Bae et al., 2018 IEEE International Electron Devices Meeting (IEDM) 28.7.1–28.7.4 (2018)

4. T.Z. Hong et al., 2020 IEEE International Electron Devices Meeting (IEDM) 15–5 (2020)

5. K. Saga, ECS Trans. 86(10), 113–124 (2018)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05

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