Author:
Dubreuil Pascal,Belharet Djaffar
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. H. Nalwa, in: Materials and Processing, Properties and Devices, vols. 1–2, Elsevier Science Ltd., 2001, 609pp.
2. C. Claeys, E. Simoen, in: Materials to Devices, Elsevier Science Ltd., 2007.
3. Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
4. Y.M. Tairov, M. Willander, in: High Temperature Electronics, Electronics Materials, vol. 2, Chapman & Hall, 1997.
5. Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献