Real-Time Endpoint Detection of Small Exposed Area SiO2 Films in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis-Reference-Cited by-同舟云学术

Real-Time Endpoint Detection of Small Exposed Area SiO2 Films in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis

Published:2013-07-15 Issue:10 Volume:10 Page:850-856
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process. Polym.

Author:

Jang Haegyu¹,Nam Jaewook²,Kim Chang-Koo³,Chae Heeyeop²

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT); Sungkyunkwan University (SKKU); Suwon 440-746 Republic of Korea

2. School of Chemical Engineering; Sungkyunkwan University (SKKU); Suwon 440-746 Republic of Korea

3. Department of Chemical Engineering and Division of Energy Systems Research; Ajou University; Suwon 443-749 Republic of Korea

Funder

Industrial Strategic Technology Development Program

Ministry of Knowledge Economy

National Research Foundation of Korea Grant funded by the Ministry of Science, ICT & Future Planning

National Research Foundation of Korea (NRF) grant funded by the Korea government

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201300030/fullpdf

Reference19 articles.

1. Dry Etching of Electronic Oxides, Polymers, and Semiconductors

2. Real-Time End-Point Detection Using Modified Principal Component Analysis for Small Open Area SiO2 Plasma Etching

3. End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

4. End‐point determination of aluminum reactive ion etching by discharge impedance monitoring

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