Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation-Reference-Cited by-同舟云学术

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Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation

Published:2010-11 Issue:11 Volume:87 Page:2294-2300
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Atanassova E.,Konakova R.V.,Mitin V.F.,Spassov D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Intern. Techn. Roadmap for Semicond. (ITRS), http://publick.itrs.net.

2. Multi-component high-K gate dielectrics for the silicon industry

3. Effects of additive elements on improvement of the dielectric properties of Ta2O5films formed by metalorganic decomposition

4. Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films

5. Hafnium-Doped Tantalum Oxide High-k Gate Dielectrics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanomechanical properties of pure and doped Ta2O5and the effect of microwave irradiation;Journal of Physics D: Applied Physics;2012-11-01

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