Author:
Tsai Ping-Hung,Chang-Liao Kuei-Shu,Kao H.Y.,Wang T.K.,Huang S.F.,Tsai W.F.,Ai C.F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. S. Inaba, T. Shimizu, S. Mori, K. Sekine, K. Saki, H. Suto, H. Fukui, M. Nagamine, M. Fujiwara, T. Yamamoto, et al., IEEE International Electron Device Meeting Digest, (San Francisco, 2002) 651-654.
2. Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer
3. Trench doping conformality by plasma immersion ion implantation (PIII)
4. H. Fujioka, et al., online available, http://www-device.eecs.berkeley.edu/qmcv/index.shtml.
5. Improved electrical and reliability Characteristics of HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献