Improved electrical characteristics and reliability of Ge MOSFET device with nitrided high-k gate dielectric by plasma immersion ion implantation-Reference-Cited by-同舟云学术

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Improved electrical characteristics and reliability of Ge MOSFET device with nitrided high-k gate dielectric by plasma immersion ion implantation

Published:2011-07 Issue:7 Volume:88 Page:1560-1563
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fu Chung-Hao,Chang-Liao Kuei-Shu,Tseng Wei-Hao,Lu Chun-Chang,Wang Tien-Ko,Tsai Wen-Fa,Li Yu-Chen,Ai Chi-Fong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Interfacial Layer-Induced Mobility Degradation in High-kTransistors

2. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

3. Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device

4. Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack;Solid-State Electronics;2012-12

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