Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer-Reference-Cited by-同舟云学术

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Published:2005-02 Issue:2 Volume:26 Page:90-92
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jang-Gn Yun ,Soon-Young Oh ,Bin-Feng Huang ,Hee-Hwan Ji ,Yong-Goo Kim ,Seong-Hyung Park ,Heui-Seung Lee ,Dae-Byung Kim ,Ui-Sik Kim ,Han-Seob Cha ,Sang-Bum Hu ,Jeong-Gun Lee ,Sung-Kweon Baek ,Hyun-Sang Hwang ,Hi-Deok Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30178/01386404.pdf?arnumber=1386404

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1. Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology;JSTS:Journal of Semiconductor Technology and Science;2013-06-30

2. Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices;Microelectronic Engineering;2010-10

3. Study of Thermal Stability of Ni Silicide using Ni-V Alloy;Transactions on Electrical and Electronic Materials;2008-04-30

4. Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability;IEEE Transactions On Nanotechnology;2007-09

5. Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII);Microelectronic Engineering;2007-09