Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors-Reference-Cited by-同舟云学术

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Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors

Published:2018-11 Issue: Volume:200 Page:56-61
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Vereecke Guy,De Coster Hanne,Van Alphen Senne,Carolan Patrick,Bender Hugo,Willems Kherim,Ragnarsson Lars-Åke,Van Dorpe Pol,Horiguchi Naoto,Holsteyns Frank

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Block-Copolymer Vesicles as Nanoreactors for Enzymatic Reactions

2. Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region

3. Integrated extended-nano chemical systems on a chip

4. Solid State Phenom;Mawatari,2016

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Etching of Silicon in Planar Nanochannels;Langmuir;2024-04-23

2. A Cleaning Method for Post-Etch Ruthenium Residue Removal Using UV and Liquid Chemical;Solid State Phenomena;2023-08-14

3. CMOS compatible manufacturing of a hybrid SET-FET circuit;Semiconductor Science and Technology;2022-11-15

4. A super high aspect ratio atomic force microscopy probe for accurate topography and surface tension measurement;Sensors and Actuators A: Physical;2022-11

5. Wetting of deep hydrophilic nanoholes by aqueous solutions;Microelectronic Engineering;2021-02

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