Study on critical dimension of printable phase defects using an EUV microscope-Reference-Cited by-同舟云学术

Study on critical dimension of printable phase defects using an EUV microscope

Published:2009-04 Issue:4-6 Volume:86 Page:505-508
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kinoshita H.,Yoshizumi T.,Osugi M.,Kishimoto J.,Sugiyama T.,Uno T.,Watanabe T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. International Technology Roadmap for Semiconductors, 2005 Edition.

2. At-wavelength extreme ultraviolet lithography mask inspection using a Mirau interferometric microscope

3. Evaluation of Finished Extreme Ultraviolet Lithography (EUVL) Masks Using a EUV Microscope

4. Actinic mask metrology for extreme ultraviolet lithography

5. Actinic Mask Inspection Using an EUV Microscope –Preparation of a Mirau Interferometer for Phase-Defect Detection–

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4. Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

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