High mobility CMOS transistors on Si/SiGe heterostructure channels-Reference-Cited by-同舟云学术

High mobility CMOS transistors on Si/SiGe heterostructure channels

Published:2012-09 Issue: Volume:97 Page:26-28
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Oh Jungwoo,Jeon Kanghoon,Lee Se-Hoon,Huang Jeff,Hung P.Y.,Ok Injo,Sassman Barry,Ko Dae-Hong,Kirsch Paul,Jammy Raj

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. A Logic Nanotechnology Featuring Strained-Silicon

2. K. Rim, E.P. Gusev, C.D, Emic, T. Kanarsky, H. Chen, J. Chu, J. Ott, K. Chan, D. Boyd, V. Mazzeo, B.H. Lee, A. Mocuta, J. Welser, S.L. Cohen, M. Ieong and H.-S. Wong, Mobility enhancement in strained Si NMOSFETs with, VLSI Symp. Tech. Dig. (2002) 12.

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