Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature-Reference-Cited by-同舟云学术

Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature

Published:2007-11 Issue:11 Volume:84 Page:2723-2728
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Carreau V.,Maîtrejean S.,Verdier M.,Bréchet Y.,Roule A.,Toffoli A.,Delaye V.,Passemard G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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4. W.Steinhoegl, G. Schindler, G. Steinlesberger, M. Traving, M. Engelhardt, in: International Conference on Simulation of Semiconductor Processes and Devices 2003 (SISPAD 2003), IEEE, Boston MA, 2003, pp. 27–30.

5. The mean free path of electrons in metals

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