An environment friendly wet strip process for 193nm lithography patterning in BEOL applications-Reference-Cited by-同舟云学术

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An environment friendly wet strip process for 193nm lithography patterning in BEOL applications

Published:2013-05 Issue: Volume:105 Page:119-123
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Vereecke G.,Kesters E.,Le Q.T.,Claes M.,Lux M.,Struyf H.,Carleer R.,Adriaensens P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Avanced Interconnects for ULSI Technology;Shi,2012

2. All-Wet Strip Approaches for Post-Etch Photoresist Layers After Low-K Patterning

3. Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

4. Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03

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