TCAD performance analysis of high-K dielectrics for gate all around InAs nanowire transistor considering scaling of gate dielectric thickness-Reference-Cited by-同舟云学术

TCAD performance analysis of high-K dielectrics for gate all around InAs nanowire transistor considering scaling of gate dielectric thickness

Published:2016-07 Issue: Volume:160 Page:22-26
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Gupta Richa,Vaid Rakesh^ORCID

Funder

University Grants Commission

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Advanced high-k dielectric stacks with poly-Si and metal gates: recent progress and current challenges;Gusev;IBM J. Res. Dev.,2010

4. Characteristics of hafnium silicate films deposited on Si by atomic layer deposition process;Lee;Trans. Electr. Electron. Mater.,2011

5. Inversion mode n-channel GaAs field effect transistor with high-k/metal gate;Souza;Appl. Phys. Lett.,2008

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