Silicide pre-clean effects on NiPtSi thermal stability for 65nm technologies and beyond-Reference-Cited by-同舟云学术

Silicide pre-clean effects on NiPtSi thermal stability for 65nm technologies and beyond

Published:2007-11 Issue:11 Volume:84 Page:2528-2532
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bonnetier Susana,Imbert Bruno,Hopstaken Marco,Galpin David,Gwoziecki Romain,Barge David,Zoll Stéphane,Anilturk Onder,Sicurani Emmanuel,Caillat Christian,Barr Alex,Gonella Roberto,Espinoux Yannick,Mur Pierre,Mayet Nicolas,Gotti Andrea,Basso Marie-Thérèse

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. On the Morphological Changes of Ni- and Ni(Pt)-Silicides

2. Role of Oxygen in Metal Silicide Formation and Properties

3. Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation

4. Effect of fluorine incorporation on the thermal stability of PtSi/Si structure

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