Chemistry in the “Front End of the Line” (FEOL)
Author:
Publisher
John Wiley & Sons, Inc.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118578070.ch1/fullpdf
Reference197 articles.
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2. Low thermal budget surface preparation of Si and SiGe;Abbadie;Applied Surface Science,2004
3. An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si (001) after a chemical mechanical planarization step;Abbadie;Microelectronic Engineering,2006
4. Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step;Abbadie;Applied Surface Science,2008
5. Akiyama K Vfb roll off in HfO 2 gate stack after high temperature annealing process - a crucial role of out diffused oxygen from HfO 2 to Si Proceedings of the 2007 VLSI Conference 72 73 2007
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