Capacitance measurements and k-value extractions of low-k films-Reference-Cited by-同舟云学术

Capacitance measurements and k-value extractions of low-k films

Published:2010-11 Issue:11 Volume:87 Page:2391-2406
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ciofi Ivan,Baklanov Mikhail R.,Tőkei Zsolt,Beyer Gerald P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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4. Low dielectric constant materials for microelectronics

5. T. Kirimura, Y. Iba, S. Ozaki, Y. Kobayashi, Y. Nakata, Effect of surface roughness on plasma-induced degradation of porous low-k material, in: MRS Adv. Metallization Conf. (AMC) Proc., 2008, pp. 565–571.

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