Sub-10nm resolution after lift-off using HSQ/PMMA double layer resist-Reference-Cited by-同舟云学术

Sub-10nm resolution after lift-off using HSQ/PMMA double layer resist

Published:2013-10 Issue: Volume:110 Page:123-125
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Rommel Marcus,Nilsson Bengt,Jedrasik Piotr,Bonanni Valentina,Dmitriev Alexandre,Weis Jürgen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Effects of developing conditions on the contrast and sensitivity of hydrogen silsesquioxane

2. Comparative study of e-beam resist processes at different development temperature

3. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art

4. Direct and Reliable Patterning of Plasmonic Nanostructures with Sub-10-nm Gaps

5. Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process

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