Effects of polishing speed and a water environment on the mechanism of nanometric mechanical polishing of single-crystal lutetium oxide-Reference-Cited by-同舟云学术

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Effects of polishing speed and a water environment on the mechanism of nanometric mechanical polishing of single-crystal lutetium oxide

Published:2022-03 Issue: Volume:30 Page:103194
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Li Yuzhu,Lai Min,Fang Fengzhou

Funder

National Key Research and Development Program of China

Science Challenge Project

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference30 articles.

1. Femtosecond Yb:Lu2O3 thin disk laser with 63 W of average power;Baer;Opt. Lett.,2009

2. Femtosecond thin-disk laser with 141 W of average power;Baer;Opt. Lett.,2010

3. Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive;Su;J. Semicond.,2012

4. The effect of the interface reaction mode on chemical mechanical polishing;Zhang;CIRP J. Manuf. Sci. Technol.,2020

5. The effect of surface polarity on the CMP behavior of 6H-SiC substrates;Chen;Russ. J. Appl. Chem.,2020

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1. Effect of rotation of abrasives on material removal in chemical mechanical polishing using a proposed three-body model: Molecular dynamics simulation;Tribology International;2024-08

2. Influence of tool-edge radius on the nano-cutting process of non-continuous surfaces in single-crystal silicon;Materials Today Communications;2024-03

3. Atomic scale investigation of notch evolution on 4H-SiC under different cutting surfaces and environments;Journal of Manufacturing Processes;2023-11

4. Molecular dynamics study of the effect of water lubrication three-body polishing sapphire;Materials Today Communications;2023-08

5. Effect of a water film on the material removal behavior of Invar during chemical mechanical polishing;Applied Surface Science;2023-04

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