The Effect of Surface Polarity on the CMP Behavior of 6H-SiC Substrates
Author:
Publisher
Pleiades Publishing Ltd
Subject
General Chemical Engineering,General Chemistry
Link
https://link.springer.com/content/pdf/10.1134/S1070427220060099.pdf
Reference17 articles.
1. Neslen, C.L., Mitchel, W.C., and Hengehold, R.L., J. Electron. Mater., 2001, vol. 30, no. 10, pp. 1271–1275.
2. Ohnishi, O., Doi, T., Kurokawa, S., et al., Jpn. J. Appl. Phys., 2012, vol. 51, no. 51, pp. 4403–4408.
3. Lin, Y.C., and Kao, C.H., Int. J. Adv. Manuf. Tech., 2005, vol. 25, nos. 1–2, pp. 33–40.
4. Zhou, L., J. Electrochem. Soc., 1997, vol. 144, no. 6, pp. L161–L163.
5. Chen, X.F., Xu, X.G., Hu, X.B., et al., Mater. Sci. Eng. B, 2007, vol. 142, no. 1, pp. 28–30.
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