Arsenic-free ovonic threshold switch for next-generation selectors in 3-dimensional cross-point memories-Reference-Cited by-同舟云学术

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Arsenic-free ovonic threshold switch for next-generation selectors in 3-dimensional cross-point memories

Published:2021-12 Issue: Volume:29 Page:102849
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Seo Myoung Su,Lee Sang Woon

Funder

Korea Ministry of Trade Industry and Energy

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference64 articles.

1. Phase change materials and their application to nonvolatile memories;Raoux;Chem. Rev.,2010

2. Phase change memory;Wong;Proc. IEEE,2010

3. Phase change memory technology;Burr;J. Vac. Sci. B,2010

4. Phase change materials and phase change memory;Raoux;MRS Bull.,2014

5. Electrical phase-change memory: fundamentals and state of the art;Terao;Jpn. J. Appl. Phys.,2009

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory array;Journal of Alloys and Compounds;2023-12

2. Epitaxial growth of NbN thin films for electrodes using atomic layer deposition;Applied Surface Science;2023-11

3. Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector With a Ge Intercalated Structure;IEEE Electron Device Letters;2023-07

4. Ge1−xSx chalcogenide alloys for OTS applications using magnetron sputtering;Journal of Alloys and Compounds;2023-01

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