Ge1−xSx chalcogenide alloys for OTS applications using magnetron sputtering-Reference-Cited by-同舟云学术

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Ge1−xSx chalcogenide alloys for OTS applications using magnetron sputtering

Published:2023-01 Issue: Volume:930 Page:167409
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lee Minkyu,Lee Sanghyeon,Kim Myoungsub,Lee Seungmin,Won Chihyeong,Kim Taehoon,Kwon Chaebeen,Yoon Kukro,Lee Jinhan,Kim Hyungjun,Lee Taeyoon

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference63 articles.

1. Topical review nanoscale memory devices;Chung;Nanotechnology,2010

2. Memory devices and applications for in-memory computing;Sebastian;Nat. Nanotechnol.,2020

3. Nanocrystal non-volatile memory devices;Horváth;Mater. Sci. Forum,2009

4. Fundamental drift of parameters in chalcogenide phase change memory;Karpov;J. Appl. Phys.,2007

5. Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory;Zhang;Solid. State Electron.,2007

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Off-Current Analysis with Temperature-Dependent Subthreshold Conduction in SiTe Based Amorphous Chalcogenides for Ovonic Threshold Switching Selector Application;Applied Science and Convergence Technology;2024-07-30

2. On-cell thickness monitoring of chalcogenide alloy layer using spectral interferometry, Raman spectroscopy, and hybrid machine learning;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

3. Ultrafast and thermally stable ternary Ge0.33SexSy ovonic threshold switching selector using magnetron sputtering;Journal of Alloys and Compounds;2024-02

4. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

5. Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory array;Journal of Alloys and Compounds;2023-12

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