High temperature reliability of μtrench Phase-Change Memory devices-Reference-Cited by-同舟云学术

High temperature reliability of μtrench Phase-Change Memory devices

Published:2012-09 Issue:9-10 Volume:52 Page:1928-1931
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Navarro G.,Souiki S.,Persico A.,Sousa V.,Nodin J.-F.,Jahan C.,Aussenac F.,Delaye V.,Cueto O.,Perniola L.,De Salvo B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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4. A 45nm generation phase change memory technology;Servalli;IEDM Tech Dig,2009

5. PRAM cell technology and characterization in 20nm node size;Kang;IEDM Tech Dig,2011

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