SnSb4/SiO2 multilayered thin films for phase change memory applications-Reference-Cited by-同舟云学术

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SnSb4/SiO2 multilayered thin films for phase change memory applications

Published:2016-01 Issue: Volume:432 Page:505-509
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Lu Yi,Hu Yifeng,Yuan Li,Zhu Xiaoqin,Zou Hua,Shen Lin,Song Zhitang

Funder

Natural Science Foundation of Jiangsu Province

University Natural Science Foundation of Jiangsu Province

Changzhou Sci&Tech Program

Open Fund of State Key Laboratory of Functional Materials for Informatics

Scientific Research Fund Project of Jiangsu University of Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Improvement of reliability and power consumption for SnSb4 phase change film composited with Ga3Sb7 by superlattice-like method

2. The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

3. Oxygen-doped Sb2Te3 for high-performance phase-change memory

4. Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

5. High thermal stability Sb3Te-TiN2 material for phase change memory application

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1. Multi-layer heterojunction phase change thin films with extremely low resistance drift;Ceramics International;2024-08

2. Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/Sb superlattice-like films on a flexible substrate;Ceramics International;2023-08

3. Crystallization and electrical conversion behavior of Ge1Sb9/HfO2 superlattice-like phase change films;Materials & Design;2021-10

4. Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application;Journal of Materials Science: Materials in Electronics;2020-06-17

5. The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications;CrystEngComm;2020

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