Improvement of reliability and power consumption for SnSb4 phase change film composited with Ga3Sb7 by superlattice-like method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919755
Reference24 articles.
1. Superlattice-like electrode for low-power phase-change random access memory
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4. Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
5. Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100−X/Sb2Te3 diluted superlattice system
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1. Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications;Journal of Non-Crystalline Solids;2023-08
2. Thickness effect of Sn15Sb85 phase change film;Acta Physica Sinica;2021
3. Improved thermal stability and fast phase change speed of Y-doped Sb7Se3 thin film for phase change memory applications;Applied Surface Science;2020-12
4. Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application;Journal of Materials Science: Materials in Electronics;2020-06-17
5. Controllable multilevel resistance state of superlattice-like GaSb/Ge2Te films for ultralong retention phase-change memory;Journal of Non-Crystalline Solids;2018-02
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