Author:
Tomita R.,Kimura H.,Yasuda M.,Maeda K.,Ueno S.,Tonegawa T.,Fujimoto T.,Moritoki M.,Iwai H.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Nickel silicide technology, in silicide technology for integrated circuits;Lavoie,2004
2. NiSi salicide technology for scaled CMOS;Iwai;Microelectron Eng,2002
3. R Tomita et al., Formation of high resistivity phases of nickel silicide at small area. Microelectron Reliab, in press.
4. Epitaxial growth of NiSi2 on ion implanted silicon at 250–280C;Lu;Appl Phys Lett,1986
5. Nucleation of a new phase from the interaction of two adjacent phases: some silicides;d’Heurle;J Mater Res,1988
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献