Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices-Reference-Cited by-同舟云学术

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Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices

Published:2015-05 Issue:5 Volume:62 Page:1663-1667
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Su Ping-Hsun,Li Yiming

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7089329/07083705.pdf?arnumber=7083705

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