Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs-Reference-Cited by-同舟云学术

Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs

Published:2006-01 Issue:1 Volume:46 Page:24-40
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chou Y.C.,Leung D.,Grundbacher R.,Lai R.,Kan Q.,Liu P.H.,Eng D.,Block T.,Oki A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference75 articles.

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2. Komiak JJ, Kong W, Chao PC, Nichols K. 3 Watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15μm power PHEMT process. The technical digest of IEEE MTT-S international microwave symposium, 1998. p. 45–8.

3. Campbell CF, Brown SA. A compact, 40GHz 0.5W power amplifier MMIC. The technical digest of IEEE GaAs IC symposium, 1999. p. 141–3.

4. Jakobus T, Bronner W, Fink T, Glorer K, Hornung J, Hülsmann A, et al. E-beam T-gate technology for pseudomorphic HEMTs on 3—GaAs with gate length of 0.15μm. The technical digest of GaAs Mantech symposium, 1998. p. 169–72.

5. A 1-W high-efficiency Q-band MMIC power amplifier;Chi;IEEE Microwave Guided Wave Lett,1995

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