Guidelines for Space Qualification of GaN HEMTs and MMICs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405226.pdf?arnumber=9405226
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si;Applied Physics Letters;2024-07-08
2. Heavy-Ion Radiation Effects in AlGaN/GaN High-Electron-Mobility Transistors;IEEE Transactions on Nuclear Science;2024-04
3. Characterization and Simulation of Terrestrial Neutron-Induced Destructive Single-Event Effects in Gallium Nitride (GaN) Power Devices;IEEE Transactions on Nuclear Science;2023-11
4. Qualification of X-band GaN Hybrid Power Amplifiers For Near Earth and Deep Space;2023 International Conference on Electromagnetics in Advanced Applications (ICEAA);2023-10-09
5. Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-10
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