Author:
Kumta A.,Rusli ,Tin Chin-Che,Ahn J.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Silicon carbide high-power devices;Weitzel;IEEE Trans Electron Dev,1996
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans Electron Dev,1993
3. SiC devices: physics and numerical simulations;Ruff;IEEE Trans Electron Dev,1994
4. The guard-ring termination for high-voltage SiC Schottky barrier diodes;Ueno;IEEE Trans Electron Dev,1995
5. Zhang Y, Yimen Z, Niu X. The study of Ni/4H-SiC SBD. In: Proceedings of 6th international solid-state and integrated-circuit technology, 2001. p. 1187.
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12 articles.
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