Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET

Author:

Kelley Mitchell D.ORCID,Pushpakaran Bejoy N.,Bilbao Argenis V.,Schrock James A.,Bayne Stephen B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. High switching performance of 1700-V, 50-A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications;Hazra;IEEE Trans. Power Electron.,2016

2. Impact of silicon carbide semiconductor technology in Photovoltaic Energy System;Pushpakaran;Renew. Sust. Energ. Rev.,2016

3. SiC power devices for microgrids;Zhang;IEEE Trans. Power Electron.,2010

4. A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide Power devices;Whitaker;IEEE Trans. Power Electron.,2014

5. Characterization and implementation of dual-SiC MOSFET modules for future use in traction converters;Fabre;IEEE Trans. Power Electron.,2015

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1. Avalanche Capability of SiC MOSFET Under High Current;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

2. Investigation on temperature limitation and failure mechanism of SiC MOSFETs under avalanche conditions;Microelectronics Reliability;2023-11

3. Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

4. A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs;Silicon;2022-08-03

5. Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02

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