Peculiarities of hole trapping in Al 2 O 3 -SiO 2 gate dielectric stack-Reference-Cited by-同舟云学术

Peculiarities of hole trapping in Al 2 O 3 -SiO 2 gate dielectric stack

Published:2017-12 Issue: Volume:79 Page:265-269
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lisiansky M.,Raskin Y.,Roizin Y.,Meyler B.,Yofis S.,Shneider Y.

Funder

Israel Ministry of Industry and Trade

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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1. Study of the high-k/SiO2 stacked gate micro-pattern trench CSTBT;Microelectronics Reliability;2024-07

2. Bipolar charge transport and contact phenomena in Al2O3;Thin Solid Films;2023-09

3. Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack;Solid-State Electronics;2023-09