1. A novel 1700V RETIGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness;Deviny,2017
2. A 1200 V-class fin P-body IGBT with ultra-narrow-mesas for low conduction loss;Feng,2016
3. The field stop IGBT (FS IGBT). A new power device concept with a great improvement potential;Laska,2000
4. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application;Takahashi,1996
5. Characterization and modeling of the LPT CSTBT-the 5/sup th/generation IGBT;Kang,2003