Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability

Author:

Mukhopadhyay SubhadeepORCID,Lee Yung-Huei,Lee Jen-Hao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Cost and power/performance optimized 20nm SoC technology for advanced mobile devices;Nallapati,2014

3. A 16nm FinFET CMOS technology for mobile SoC and computing applications;Wu,2013

4. An enhanced 16nm CMOS technology featuring 2nd generation FinFET transistors and advanced Cu/low-k interconnect for low power and high performance applications;Wu,2014

5. A novel on-die GHz AC stress test methodology for high speed IO application;Kang,2017

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