Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds-Reference-Cited by-同舟云学术

Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds

Published:2018-02 Issue: Volume:81 Page:210-217
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gholamirad Maryam,Soltani Siavash,Sepehrband Panthea^ORCID

Funder

Santa Clara University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference61 articles.

1. Wire Bonding in Microelectronics;Harman,2010

2. The International Technology Roadmap for Semiconductors;ITRS,2013

3. Development and status of Cu ball/wedge bonding in 2012;Schneider-Ramelow;J. Electron. Mater.,2013

4. Copper Wire Bonding;Chauhan,2014

5. Copper wire bonding: R&D to high volume manufacturing;Chylak,2012

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