Stress evolution in the metal layers of TSVs with Bosch scallops-Reference-Cited by-同舟云学术

Stress evolution in the metal layers of TSVs with Bosch scallops

Published:2013-09 Issue:9-11 Volume:53 Page:1602-1605
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Singulani A.P.,Ceric H.,Selberherr S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. Through silicon via reliability;Cassidy;IEEE Trans Dev Mat Reliab,2012

3. Lu KH, Zhang X, Ryu S, Im J, Huang R, Ho PS. Thermo-mechanical reliability of 3-D ICs containing through silicon vias. In: Electronic components and technology conference, San Diego, CA, USA; May 2009. p. 630–4.

4. Singulani AP, Ceric H, Selberherr S. Thermo-mechanical simulation of an open tungsten TSV. In: Proceeding of the IEEE electronic packaging technology conference, Singapore, Singapore; December 2012. p. 110–4.

5. Singulani AP, Ceric H, Filipovic L, Langer E. Impact of Bosch scallops dimensions on stress of an open through silicon via technology. In: 14th International conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (EuroSimE), Wroclaw, Poland; 2013. p. 1–6.

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