1. Semiconductor power devices;Lutz,2011
2. Measurement and analysis of carrier distribution and lifetime in fast switching power rectifiers;Houston;IEEE Trans Electron Dev,1980
3. Hoban PT, Carreira M, Shammas NYA. Failure in GTO circuits due to the change in recovery characteristics of snubber diodes. In: Proceedings ISPSD´1992, Tokyo; 1992. p. 252–3.
4. Benda V. Design considerations for fast soft reverse recovery diodes. In: Proceedings EPE’93, Brighton; 1993. p. 288–92.
5. Lutz J, Scheuermann U. Advantages of the New Controlled Axial Lifetime Diode. In: Proceedings PCIM 1994, Nürnberg; 1994. p. 163–9.