A high voltage diode with partial n<sup>+</sup> adjusting region embedded at the anode side-Reference-Cited by-同舟云学术

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A high voltage diode with partial n⁺ adjusting region embedded at the anode side

Published:2019 Issue:14 Volume:16 Page:20190326-20190326
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Zhang Lei¹,Wang Cailin¹

Affiliation:

1. Department of Electronic Engineering, Xi’an University of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/16/14/16_16.20190326/_pdf

Reference31 articles.

1. [1] T. Minato and K. Sato: “Future trend of Si power device,” IEICE Electron. Express 11 (2014) 20142002 (DOI: 10.1587/elex.11.20142002).

2. [2] J. Xie, et al.: “A snapback-free reverse conducting IGBT with recess and floating buffer at the backside,” IEICE Electron. Express 14 (2017) 20170677 (DOI: 10.1587/elex.14.20170677).

3. [3] L. Zhang and C. Wang: “Influence of carrier lifetime distribution on the current filament in high voltage diode,” Microelectron. Reliab. 72 (2017) 75 (DOI: 10.1016/j.microrel.2017.04.001).

4. [4] C. Wang, et al.: “Inhibition of peak electric field shifting on current filaments of high voltage diode,” Microelectron. Reliab. 94 (2019) 13 (DOI: 10.1016/j.microrel.2019.01.008).

5. [5] H. Schulze, et al.: “Limiting factors of the safe operating region for power devices,” IEEE Trans. Electron Devices 60 (2013) 551 (DOI: 10.1109/TED.2012.2225148).

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