Identifying defect energy levels using DLTS under different electron irradiation conditions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://link.springer.com/article/10.1007/s41365-017-0331-7/fulltext.html
Reference22 articles.
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2. B.J. Baliga, E. Sun, Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers. IEEE Trans. Electron Devices 24, 685–688 (1977). https://doi.org/10.1109/T-ED.1977.18803
3. C. Codreanu, E. Iliescu, V. Obreja, Silicon diode electrical characteristics under electron-beam irradiation conditions-experiments and theoretical interpretation, in IEEE semiconductor conference CAS 2001 proceedings international, vol. 2001, pp. 481–484 (2001). https://doi.org/10.1109/SMICND.2001.967510
4. L. Pína, J. Vobecký, High-power silicon P–i–N diode with cathode shorts: the impact of electron irradiation. Microelectron. Reliab. 53, 681–686 (2013). https://doi.org/10.1016/j.microrel.2013.02.008
5. S. Krishnan, G. Sanjeev, M. Pattabi, Electron irradiation effects on the Schottky diode characteristics of p-Si. Nucl. Instrum. Methods Phys. Res. 266, 621–624 (2008). https://doi.org/10.1016/j.nimb.2007.11.049
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