Development of highly accelerated electromigration test

Author:

Tan Cher Ming,Li Wei,Tan Kok Tong,Low Frankie

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron cooper and aluminum interconnects;Tan;IEEE Transactions on Device and Materials Reliability,2004

2. Cher Ming Tan, Yeo KNC. Reliability Statistics Perspective on Standard Wafer-level Electromigration Accelerated Test (SWEAT). Electrical and Computer Engineering, 2000 Canadian Conference on, vol. 167–72, 2000.

3. N.K. Yap, A. Yap, Y.C. Tan, K.F. Lo, Electromigration Test on Via Line Structure with a Self-heating Method, Integrated Reliability Workshop Final Report, IEEE International, pp. 162–4, 2002.

4. Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects, device and materials reliability;Tan;IEEE Transcations,2004

5. Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation;Dalleau;Microelectronics Reliability,2001

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Finite Element Method for Electromigration Study;Springer Series in Reliability Engineering;2011

2. Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects;Journal of Applied Physics;2009-01

3. A junction characterization for microelectronic devices quality and reliability;Microelectronics Reliability;2008-03

4. Electromigration in ULSI interconnects;Materials Science and Engineering: R: Reports;2007-10

5. Unveiling the electromigration physics of ULSI interconnects through statistics;Semiconductor Science and Technology;2007-07-19

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