New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery-Reference-Cited by-同舟云学术

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery

Published:2014-06 Issue:6-7 Volume:54 Page:1288-1292
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ivo Ponky,Cho Eunjung Melanie,Kotara Przemyslaw,Schellhase Lars,Lossy Richard,Zeimer Ute,Mogilatenko Anna,Würfl Joachim,Tränkle Günther,Glowacki Arkadiusz,Boit Christian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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4. Effect of gate leakage in the subthreshold characteristics of AlGaN/GaN HEMTs;Chung;IEEE Electron Dev Lett,2008

5. Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface;Hong;Electron Lett,2008

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4. Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress;IEEE Transactions on Electron Devices;2015-08

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