Author:
Kastensmidt F.L.,Tonfat J.,Both T.,Rech P.,Wirth G.,Reis R.,Bruguier F.,Benoit P.,Torres L.,Frost C.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Berg M. Fault tolerance implementation within SRAM based FPGA designs based upon the increased level of single event upset susceptibility. In: On-Line Testing Symposium, IOLTS; 2006.
2. Ceratti A, Copetti T, Bolzani L, Vargas F. On-chip aging sensor to monitor NBTI effect in nano-scale SRAM. Design and Diagnostics of Electronic Circuits & Systems (DDECS). In: 15th international symposium on IEEE; 2012. p. 354–9.
3. Impact of NBTI aging on the single-event upset of SRAM cells;Bagatin;IEEE Trans Nucl Sci,2010
4. The impact of aging effects and manufacturing variation on SRAM soft-error rate;Cannon;IEEE Trans Dev Mater Reliab,2008
5. 14MeV neutron-induced SEU in SRAM devices;Flament;IEEE Trans Nucl Sci,2004
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献