Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Author:

Rossetto I.,Rampazzo F.,Meneghini M.,Silvestri M.,Dua C.,Gamarra P.,Aubry R.,di Forte-Poisson M.-A.,Patard O.,Delage S.L.,Meneghesso G.,Zanoni E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Reliability of GaN high-electron-mobility transistors: state of the art and perspectives;Meneghesso;Dev Mater Rel IEEE Trans,2008

2. Kohn et al. InAlN – a new barrier material for GaN-based HEMTs. In: International workshop on physics of semiconductor devices. vol. 311(316), IWPSD; 2007. p. 16–20.

3. Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?;Medjdoub;Electron Dev Meet,2006

4. Kohn et al. InAlN/GaN heterostructures for microwave power and beyond. Electron Devices Meeting (IEDM). IEEE International, vol. 1(4), 2009. p. 7–9.

5. Katz O et al. Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance. Electron Devices Meeting. IEDM Technical Digest. IEEE International, vol. 1035(1038), 2004. p. 13–5.

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1. Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07

2. Effect of different layer structures on the RF performance of GaN HEMT devices;Semiconductor Science and Technology;2021-08-31

3. Current Status of Carbon‐Related Defect Luminescence in GaN;physica status solidi (a);2021-08-24

4. Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies;IEEE Transactions on Electron Devices;2020-06

5. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities;Power Electronics and Power Systems;2016-09-09

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