Voltage acceleration and t63.2 of 1.6–10 nm gate oxides-Reference-Cited by-同舟云学术

Voltage acceleration and t63.2 of 1.6–10 nm gate oxides

Published:2004-06 Issue:6 Volume:44 Page:909-916
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Vollertsen R.-P.,Wu E.Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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5. A qualitative physical model for time-dependent breakdown in SiO2;Chen;Int. Reliab. Phys. Sympos. Proc.,1985

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