A highly stable reliable SRAM cell design for low power applications

Author:

Pal SoumitraORCID,Bose Subhankar,Ki Wing-Hung,Islam Aminul

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference46 articles.

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4. A 290-mV, 7-nm ultra-Low-voltage one-port SRAM compiler design using a 12T write contention and read upset free bit-cell;Sinangil;IEEE J. Solid State Circuits,2019

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