Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

Author:

Poliakov Pavel,Blomme Pieter,Corbalan Miguel Miranda,Houdt Jan Van,Dehaene Wim

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. International Technology Roadmap for Semiconductors; 2009 Edition. .

2. Non-volatile memories for removable media;Micheloni;Proc IEEE,2009

3. Floating gate memories: Moore’s law continues;Lai;VLSI-TSA,2005

4. A 70nm 16Gb 16-level-cell NAND Flash memory;Shibata;J SSC,2008

5. Extraction of 3D parasitic capacitances in 90nm and 22nm NAND Flash memories;Postel-Pellerin;Microelectron Reliab,2009

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