Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film-Reference-Cited by-同舟云学术

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Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

Published:2017-12-01 Issue:2S2 Volume:57 Page:02CA02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Chi-Chang,Hsiao Yu-Ping,You Hsin-Chiang,Lin Guan-Wei,Kao Min-Fang,Manga Yankuba B.,Yang Wen-Luh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2S2/a=02CA02/pdf

Reference38 articles.

1. Effects of floating-gate interference on NAND flash memory cell operation

2. A Zeroing Cell-to-Cell Interference Page Architecture With Temporary LSB Storing and Parallel MSB Program Scheme for MLC NAND Flash Memories

3. Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

4. Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance

5. Scalable Virtual-Ground Multilevel-Cell Floating-Gate Flash Memory

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polyimide-based ultraviolet-operated nonvolatile photomemory device;Applied Physics Letters;2022-11-21

2. Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories;IEEE Transactions on Electron Devices;2020-01

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