Effect of the Nanoscale Bitline String Thickness on the Electric Characteristics of Vertical NAND Flash Memory Devices
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Published:2017-06-01
Issue:6
Volume:17
Page:4145-4148
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Jung Hyun Soo1,
Ahn Joonsung1,
Kim Tae Whan1
Affiliation:
1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering