A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection-Reference-Cited by-同舟云学术

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

Published:2011-02 Issue:2 Volume:51 Page:337-341
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ma Chenyue,Zhang Lining,Zhang Chenfei,Zhang Xiufang,He Jin,Zhang Xing

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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2. Investigation and modeling of hot carrier effects on performance of 45- and 55-nm NMOSFETs with RF automatic measurement;Tang;IEEE Trans Electron Dev,2008

3. Analog device and circuit performance degradation under substrate bias enhanced hot carrier stress;Narasimhulu;IEEE 44th Ann Int Reliab Phys Sympos,2006

4. The threshold–voltage model of MOSFET devices with localized interface charge;Jean;IEEE Trans Electron Dev,1997

5. Analytical threshold voltage model for double-gate MOSFETs with localized charges;Kang;IEEE Electron Dev Lett,2008

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2. Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs;IEEE Transactions on Electron Devices;2020-02

3. Coupling mechanism of interface-induced generation-recombination current with the floating source in nMOSFET;Journal of Applied Physics;2016-11-07

4. Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators;Microelectronic Engineering;2016-06

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